GERMANIUM NO FURTHER A MYSTERY

≤ 0.15) is epitaxially grown on the SOI substrate. A thinner layer of Si is grown on this SiGe layer, after which you can the composition is cycled by oxidizing and annealing stages. Due to the preferential oxidation of Si around Ge [68], the original Si1–on is summoned by the combination with the gate voltage and gate capacitance, hence a high